The rapid expansion of AI workloads has exposed memory as a critical bottleneck in computing infrastructure. Traditional DRAM is fast but volatile and requires continuous power to retain data. This inefficiency increases costs, CO₂ emissions and regulatory risk.
Ferroelectric Memory GmbH (FMC), founded in Dresden in 2016, is tackling this challenge with a memory solution called DRAM+. DRAM+ is based on ferroelectric hafnium oxide technology and combines the speed and non-volatile persistence of traditional DRAM.
Earlier this week, FMC raised €100 million in a funding round led by HV Capital and supported by the European Innovation Council.
The new funding will accelerate the commercialization of the company’s DRAM+ and 3D CHACHE+ memory chips and system solutions and expand its global presence. FMC’s technology is built on its superior energy efficiency and will accelerate the global launch of AI data center and AI edge applications, establishing a new industry standard in the more than €100 billion memory chip market.
Making Europe a leader in semiconductor memory technology
FMC was born out of research at the Dresden University of Technology and Globalfoundries, and its founders include Wolfram Drescher, Dr. Stefan Müller, Menno Mennenga and Marko Noack. The company is currently led by CEO Thomas Rykes, and other key leaders include Ayman Abuelwafa and Maher Amer. Their mission is to establish Europe as a leader in semiconductor memory technology, essential for the age of AI.
At the heart of FMC is the use of ferroelectric hafnium oxide to construct non-volatile memory cells called FeFETs and FeCAPs. Unlike traditional ferroelectric memory, which struggles with integration and density, FMC’s technology is compatible with modern CMOS processes, well below 10 nm.
“We are working on the next generation of memory chips and system solutions that are not only more sustainable and energy efficient, but also faster and cheaper than current industry standards. Bandwidth has traditionally been the primary metric for AI computing, but now energy efficiency is becoming a key element of next-generation AI,” said Thomas Lukes, CEO of FMC.
He further added, “Memory chips are the main bottleneck in AI stacks. FMC’s DRAM+ and 3D CACHE+ technologies address this very problem, faster and more energy-efficient than established products. This lays the foundation for scaling up AI data center and AI edge applications.”
FMC’s main competitors are in the broader “storage class memory” space, including STT-MRAM, resistive RAM (ReRAM), phase change memory (PCM), and Intel/Micron’s Optane (3D XPoint). FMC stands out for its superior energy efficiency, scalability and seamless integration into established manufacturing processes.
What’s next?
FMC aims to bring DRAM+ and 3D CACHE+ products to the global market starting in 2027. FMC plans to partner with leading semiconductor foundries and OEMs to enable high-volume production in 300mm fabs around the world.
The company’s roadmap includes moving from successful pilot designs to large-scale supply contracts, expanding strategic alliances and advancing Europe’s ambitions for semiconductor sovereignty.
