-
Designed for high-efficiency power systems in AI servers, EV chargers, and industrial applications
-
Low RDS(ON), fast recovery body diode, and integrated Zener diode improve performance and reliability
Seoul, South Korea, June 22, 2026–(BUSINESS WIRE)–Magnachip Semiconductor Corporation (NYSE:MX, “Magnachip”) today announced the launch of two new 6th generation 600V super junction (SJ) MOSFETs designed to meet the increasing performance and efficiency requirements of AI servers, EV charging systems, and industrial power applications.
The new products feature low RDS(ON) values of 36mΩ and 37mΩ, which help reduce conduction losses and improve overall power conversion efficiency. In addition, both devices integrate a Zener diode between the gate and source terminals for added protection against electrostatic discharge (ESD), improving device reliability. Chip size has also been significantly reduced compared to previous generations, contributing to increased integration and design flexibility.
MMTB60R037G6FZVRH incorporates a fast recovery body diode, which helps reduce reverse recovery losses and improve switching performance in high frequency power conversion systems. These characteristics make it ideal for powering AI servers, where efficiency, thermal management, and power density are key design considerations.
Both devices are available in TOLL packages and are designed for high power, high current applications. It also features a Kelvin source configuration to reduce parasitic inductance and improve switching stability.
Growing demand for energy-efficient power conversion solutions across AI servers, EV charging systems, and industrial power supplies is driving the adoption of advanced power semiconductors. Higher efficiency, improved thermal performance, and increased power density are key requirements for next-generation power systems.
According to Omdia, the discrete semiconductor market within computing and data storage applications is expected to grow from approximately $3.7 billion in 2025 to approximately $5.9 billion by 2030, representing a compound annual growth rate (CAGR) of approximately 9%. The increasing adoption of high-density, high-efficiency server power architectures is expected to further increase the demand for power discrete devices, including SJ MOSFETs.
“Power semiconductor performance is becoming increasingly important as the demand for more efficient and reliable power systems continues to grow across AI infrastructure, EV charging systems, and industrial applications,” said Hyuk Woo, chief technology officer at Magnachip. “Our new 6th generation 600V SJ MOSFETs combine low on-resistance, enhanced switching characteristics, and robust reliability features to help customers increase efficiency and power density in next-generation power supply designs.”
