The new devices target 48V hot-swap architectures, which are becoming increasingly important as AI servers push the boundaries of performance with advanced GPU and TPU technologies. According to AOS, the AOLV66935 combines a wide range of SOA features with ultra-low on-resistance to address efficiency and reliability challenges in high-power environments.
The MOSFET leverages AOS' proprietary AlphaSGT technology, which combines a trench design that reduces on-resistance with enhanced SOA performance. This component has been tested at both 25°C and 125°C to ensure reliable operation under extreme thermal conditions.
In terms of packaging, the LFPAK 8×8 format is 60% smaller in size compared to traditional TO-263 (D2PAK) packaging. Incorporates advanced clip technology for high current handling and increased inrush current capability. The copper clip design also provides low thermal resistance and promotes heat dissipation. This device is manufactured in an IATF 16949 certified facility and supports Automated Optical Inspection (AOI) requirements.
In terms of performance, the AOLV66935 achieves a maximum RDS(on) of 1.86 milliohms at Vgs=10V, minimizing power loss and heat generation. These features, combined with high current capabilities, provide durability against thermal cycling under the harsh operating conditions typical of modern AI server deployments.
AOS confirmed that the AOLV66935 is now in volume production with a standard lead time of 14 to 16 weeks.
